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Beilstein J. Nanotechnol. 2020, 11, 1546–1555, doi:10.3762/bjnano.11.137
Figure 1: Powder XRD of the Cu2O NPs used before (black) and after (blue) the degradation of MP. The red numb...
Figure 2: Color powders for the three different sizes as well as their color in aqueous dispersions with a co...
Figure 3: a) HRTEM image of typical Cu2O NP used in degradation of MP. Particle average size in the range of ...
Figure 4: 31P NMR, using CDCl3 as solvent, of the degradation products obtained after 14, 44, and 144 h of de...
Figure 5: 31P NMR, using CDCl3 as solvent, of the degradation products obtained after 14, 44, and 144 h of de...
Figure 6: 1H NMR, using D2O as solvent, of the degradation products obtained after 144 h of degradation time ...
Scheme 1: Observed degradation pathway of MP with Cu2O NPs in aqueous solution to form 4-nitrophenol and dime...
Figure 7: UV–vis spectra of the degradation of MP using the 45 nm Cu2O NPs.
Figure 8: UV–vis spectra of the degradation of MP using the 16 nm Cu2O NPs.
Figure 9: Degradation of methyl parathion with different sizes of Cu2O NPs.
Figure 10: XPS spectra for Cu2O NPs of 16 nm and 29 nm size, a) Cu 2p, b) O 1s.
Beilstein J. Nanotechnol. 2020, 11, 41–50, doi:10.3762/bjnano.11.4
Figure 1: Epitaxial stack designs A–E grown by MOCVD. Different sequences of 2D and 3D GaN were prepared. The...
Figure 2: Reproducibility analysis of the ICP-OES method for determining etch depth z (GaN). Four GaN samples...
Figure 3: PL images of A (a), D (b) and E (c) used for determination of dislocation density.
Figure 4: Average GaN removal z (GaN) of A and B during etching in 30 wt % KOH at 70 °C (a) and 80 °C (b) det...
Figure 5: SEM images of A after 60 min etching in 30 wt % KOH solution at RT (a), and of B after 2 min etchin...
Figure 6: ICP-OES determined average GaN removal z (GaN) of B and C during etching in 30 wt % KOH at 80 °C (a...
Figure 7: ICP-OES determined average GaN removal z (GaN) of A and D (a) and A and E (b) during etching in 30 ...
Figure 8: SEM image of the second 2D–3D transition plateau on pyramid top of E after etching in 30 wt % KOH s...